| PART |
Description |
Maker |
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| H5TQ1G63EFRG7J H5TQ1G63EFRG7C H5TQ1G63EFRG7I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| K4B1G0846G-BCMA K4B1G0846G-BCH9 K4B1G0846G-BCK0 K4 |
1Gb G-die DDR3 SDRAM
|
Samsung semiconductor
|
| EBJ10UE8BDS0 EBJ10UE8BDS0-AE-F EBJ10UE8BDS0-DJ-F E |
1GB DDR3 SDRAM SO-DIMM
|
Elpida Memory
|
| K4B1G1646C-ZCG9 K4B1G0846C-ZCG9 K4B1G0446C-ZCG9 |
1Gb C-die DDR3 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43TR16640A |
128MX8, 64MX16 1Gb DDR3 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS46TR16640ED-125KBLA2 IS46TR16640ED-125KBLA3 IS46 |
128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
|
Integrated Silicon Solu...
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs
1G bits DDR3 SDRAM
1G bits DDR3 SDRAM
|
Elpida Memory
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
